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PTF 10195 125 Watts, 869-894 MHz GOLDMOS (R) Field Effect Transistor
Description
The 10195 is an internally matched 125-watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability
* * *
Typical Power Output and Efficiency vs. Input Power
160 64 56
Power Output (Watts)
140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Power Output Efficiency
40
Efficiency (%)
48
VDD = 28 V IDQ = 1.3 A f = 894 MHz
32 24 16 8 0
1234
1019 5600 5 -A
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1300 mA, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gpe P-1dB h Y
Min
13 125 45 10:1
Typ
14 140 53 --
Max
-- -- -- --
Units
dB Watts % --
e
1
PTF 10195
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 3.0
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 100 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 266 1.52 -40 to +150 .66
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance Test Circuit
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
200 160 Output Power (W)
Broadband Test Fixture Performance
18 16 Efficiency 55 45 Gain
20 18
Output Power & Efficiency
Gain
16 Gain (dB) 14 12 10 869
VDD = 28 V IDQ = 1.3 A
Gain (dB)
14 12 10 8 6 4
120 80
VDD = 28 V IDQ = 1.3 A POUT = 125 W
35 25
Efficiency (%)
40
874
879
884
889
0 894
2 869
874
879
15 0 5 -10 -5 -20 -15 Return Loss (dB) -30 -25 884 889 894
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency (%)
20
65
e
Power Gain vs. Output Power
17 IDQ = 1600 mA 16 IDQ = 1300 mA 15 IDQ = 1000 mA 14
PTF 10195
Output Power (@ 1 dB Compression) vs. Supply Voltage
130
Output Power (Watts)
VDD = 28 V f = 894 MHz
Power Gain (dB)
120 110 100 90 80
IDQ = 1300 mA f = 894 MHz
13 0 1 10 100 1000
20
22
24
26
28
30
Output Power (Watts)
Supply Voltage (Volts)
Gate-Source Voltage vs. Case Temperature
1.04 1.03 Bias Voltage (V) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 Case Temperature (C) 130 Voltage normalized to 1.0 V Series show current (A)
0.8 2.728 4.656 6.584 8.512 10.44
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-20
VDD = 28 V, IDQ = 1.3 A
-30
3rd Order
f1 = 894 MHz, f2 = 894.1 MHz
5th
IMD (dBc)
-40
-50 7th -60 10 20 30 40 50 60 70 80 90 100
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage *
300 250 40
Cgs
VGS = 0 V f = 1 MHz
35 30 25 20 15 10
Cds & Cgs (pF)
150 100 50 0 0
Cds
5
Crss
10 20 30 40
0
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished product will not yield these figures.
3
Crss (pF)
200
PTF 10195
Impedance Data
RAT
e
D
0 .1
G S
TO W A
RD G
EN E
Z Source
Z Load
Z0 = 50 W
OR
VDD = 28 V, POUT = 125 W, IDQ = 1300 mA
Frequency
MHz 860 869 880 894 905 R
Z Source W
jX -1.13 -0.94 -0.73 -0.44 -0.22 R 1.97 1.86 1.69 1.52 1.39
Z Load W
0.0
Z Load
905 MHz
0.1 TOW AR D LOAD G TH S 0.2
jX 0.99 1.19 1.38 1.63 1.85
860 MHz
2.30 2.18 2.00 1.79 1.69
905 MHz
860 MHz
Z Source
0.1
Test Circuit
Test Circuit Schematic for f = 894 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 PTF 10195 LDMOS Transistor 0.0273 l 894 MHz Microstrip 50 W 0.0244 l 894 MHz Microstrip 30 W 0.0204 l 894 MHz Microstrip 30 W 0.1800 l 894 MHz Microstrip 30W 0.0715 l 894 MHz Microstrip 8.63W 0.0802 l 894 MHz Microstrip 8.63 W 0.1026 l 894 MHz Microstrip 8.63 W 0.0491 l 894 MHz Microstrip 8.63 W 0.0389 l 894 MHz Microstrip 30W 0.1411 l 894 MHz Microstrip 30 W 0.0116 l 894 MHz Microstrip 30 W 0.0428 l 894 MHz Microstrip 30 W 0.0293 l 894 MHz Microstrip 50 W C1, C3, C8, C12 C2 C4, C5 C6 C7 C11 C13 C10 C9 J1,J2 L1 R1, R2,R3 Circuit Board Capacitor, 43pF 100B 430 Capacitor, 4.3pF 100B 4R3 Capacitor, 5.6pF 100B 5R6 Capacitor, 7.5pF 100B 7R5 Capacitor, 9.1pF 100B 9R1 Capacitor, 5.1pF 100B 5R1 Capacitor, 3.6pF 100B 3R6 Capacitor, 0.1uF Digi-KeyP4525-ND Capacitor,100uF,50V Digi-KeyP5182-ND Connector, SMA, Female, Panel Mount 1301-RPM 513 412/53 7 Turns,22AWG,.120 DIA I.D. N/A Resistor, 220ohm Digi-Key 220QBK-ND .031" thick, er = 4.0, G200 AlliedSignal
4
AV
E LE N
e
PTF 10195
Components Layout (not to scale)
10195_A INPUT
ERICSSON
ERICSSON
10195_A OUTPUT
Artwork (not to scale)
5
PTF 10195
Case Outline Specifications Package 20248
e
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Speciffications subject to change without notice. L3 (c) 2000 Ericsson Inc. EUS/KR 1522-PTF 10195 Uen Rev. A1 12-08-00
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